Wannier–Stark resonances in Zener tunneling diodes with GaAs/AlAs superlattices |
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| Authors: | K Murayama H Nagasawa S Ozaki M Morifuji C Hamaguchi A Di Carlo P Vogl G Böhm G Weimann |
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| Institution: | aDepartment of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565, Japan;bWalter Schottky Institut, Technische Universität München, D-85748, Gasrching, Germany |
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| Abstract: | We present DC transport measurements of the valence to conduction band (Zener) tunneling current in ap–i–ndiode with an ultrathin intrinsic layer containing a (GaAs)5/(AlAs)2multi-quantum well structure. According to recent theoretical predictions, the DC current should show maxima as a function of the reverse bias voltage that reflect the formation of Wannier–Stark resonances. So far, Wannier–Stark resonances have only been observed optically and never in a regime of strong Zener tunneling. Experimentally, we find the second derivative of the current-voltage characteristics to show a weak oscillatory structure indeed, indicating the existence of Wannier–Stark resonances in Zener tunneling. |
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| Keywords: | electron states in low-dimensional structures tunneling electronic transport phenomena in thin films |
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