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Spin relaxation of electrons excited in p-doped semiconductor heterostructures |
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| Authors: | MZ Maialle MH Degani |
| Institution: | 1. Laboratoire de la Matière Condensée et des Sciences Interdisciplinaires (LaMCScI), Faculty of Sciences, Mohammed V University of Rabat, B.P. 1014, Rabat, Morocco;2. USM/DERS/Centre National de l''Energie, des Sciences et des Techniques Nucléaires (CNESTEN), Rabat, Morocco;3. Intelligent Processing and Security of Systems, Faculty of Sciences, Mohammed V University of Rabat, B.P. 1014 Rabat, Morocco |
| Abstract: | We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron–hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including the spin mixing of the valence-hole states. This spin mixing allows exchange spin-relaxation channels which are energy forbidden in the case of pure-spin holes. |
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