A study of GaInP/GaAs interfaces: metallurgical coupling of successive quantum wells |
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| Institution: | 1. School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;2. School of Engineering and Materials Science, Queen Mary University of London, Mile End, London E1 4NS, United Kingdom;3. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, PR China;4. School of Geoscience and Info-Physics, Central South University, Changsha 410083, PR China;5. Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Productive Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Science, Ningbo 315201, PR China;1. CIRIMAT, CNRS-INP-UPS, Université Toulouse 3 Paul-Sabatier, 118 route de Narbonne, F-31062, Toulouse Cedex 9, France;2. Plateforme Nationale CNRS de Frittage Flash, PNF², MHT, Université Toulouse 3 - Paul-Sabatier, 118 route de Narbonne, F-31062, Toulouse Cedex 9, France;3. CIRIMAT, CNRS-INP-UPS, INP-ENSIACET, 4 allée Emile Monso, BP 44362, F-31030, Toulouse Cedex 4, France;1. Research Laboratory of Advanced Water and Wastewater Treatment Processes, Department of Applied Chemistry, Faculty of Chemistry, University of Tabriz, 51666-16471 Tabriz, Iran;2. Department of Materials Science and Nanotechnology, Near East University, 99138 Nicosia, North Cyprus, Mersin 10, Turkey;1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104, Slovakia;2. Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541, Slovakia;3. Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248, Slovakia;4. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219, Slovakia |
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| Abstract: | We present a study of GaInP/GaAs interfaces by means of photoluminescence (PL) of multi quantum wells (MQW), embedded in GaInP, or asymmetric structures having an AlGaAs barrier GaInP/GaAs/AlGaAs. The PL energies of quantum wells were compared with calculations based on the transfer matrix envelope function approximation, well suited for asymmetric structures. GaInP/GaAs/AlGaAs MQW structures (GaInP grown first) are in reasonably good agreement with calculations. Reverse ones, AlGaAs/GaAs/GaInP, present a lower PL energy than calculated. But the agreement with theory is recovered on single quantum well samples, or in MQW when the GaInP thickness is increased up to 100 nm. We interpret this phenomenon as a diffusion of arsenic atoms from the next GaAs well through the GaInP barrier. Arsenic atoms exchange with phosphorus atoms at the GaInP-on-GaAs interface of the former well, leading to a small gap strained InGaAs region responsible for the lowering of PL energies. |
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