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Giant magnetoresistance caused by magnetic-field-sensitive resonant tunnelling in a random multibarrier semiconductor superlattice
Institution:1. Department of Pediatrics, Shimane University Faculty of Medicine, 89-1, Enya-cho, Izumo, Shimane 693-8501, Japan;2. Medical Genetics Laboratory, National Center for Maternal and Child Health, Khuvisgalchdyn Street, Bayangol District, Ulaanbaatar 16060, Mongolia;3. Department of Pediatrics, Peking University First Hospital, No.1, Xi-an-men Road, Xicheng District, Beijing 100034, China;4. Center for Newborn Screening and Rare Disease, Department of Medical Genetics Metabolism and Endocrinology, Vietnam National Children''s Hospital, No.18/879, La Thanh Road, Dong Da District, Hanoi, Viet Nam;5. Institute of Medical Genetics & Genomics, Sir Ganga Ram Hospital, Rajinder Nagar, New Delhi 110060, India;6. Department of Pediatrics, Soon Chun Hyang University Hospital, 59, Daesagwan-ro, Yongsan-gu, Seoul 04401, Republic of Korea;7. Institute of Clinical Medicine, National Yang-Ming University, Medical Science & Technology Building 8F, No.201, Sec.2, Shih-Pai Road, Taipei 112, Taiwan, ROC;8. Department of Pediatrics, University of Heidelberg, University Children Hospital, Im Neuenheimer Field 669, Heidelberg D-69120, Germany;9. Department of Pediatrics, School of Medical Sciences, University of Fukui, 23 Shimogogetsu, Matsuoka, Eiheiji-cho, Fukui 910-1193, Japan;10. Department of Pediatrics, Graduate School of Medicine, Gifu University, 1-1, Yanagido, Gifu 501-1194, Japan;11. Department of Pediatrics, Hanoi Medical University. Hanoi, Viet Nam
Abstract:By using a transmission probability formalism, we perform a calculation for the conductance related to the tunnelling of electrons through a semiconductor multibarrier superlattice with special thickness randomness in the presence of a magnetic field. Because of the sharp resonance of the tunnelling in such a structure, the current is highly sensitive to the variation of the in-plane magnetic field. The calculated results show a giant magnetoresistance even for small strength of the field. Possible applications of this effect are discussed.
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