| Abstract: | The properties of GaAs---AlGaAs quantum well lasers are studied theoretically as a function of the crystallographic growth direction. The growth directions considered are 001] 111], 110], 310], 311] and 211]. The electronic dispersion is obtained using an 8×8 k·p Hamiltonian which couples the electron, heavy-hole, light-hole and spin-orbit split-off bands. We calculate the threshold current for single quantum well lasers and determine the lowest threshold current for the growth directions considered. It is seen that for some growth directions the threshold current can be less than that previously calculated for a strained-layer quantum well laser. The results also differ from a previous model which completely decoupled the valence and conduction bands. |
