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AFM and TEM study of hydrogenated sputtered Si/Ge multilayers
Authors:C Frigeri  L Nasi  M Serényi  A Csik  Z Erdélyi  DL Beke
Institution:1. CNR-IMEM Institute, Parco Area delle Scienze, 37/A, 43010 Parma, Italy;2. MTA-MFA Institute, Konkoly-Thege ut 29-33, H-1121 Budapest, Hungary;3. Institute of Nuclear Research of HAS, Bem tér 18/C, H-4001 Debrecen, Hungary;4. Department of Solid State Physics, University of Debrecen, P.O. Box 2, H-4010 Debrecen, Hungary;1. Division of Nuclear Engineering Science, Research Reactor Institute, Kyoto University, 2-1010, Asashiro Nishi, Kumatori, Sennan, Osaka 590-0494, Japan;2. Graduate School of Engineering, Kyoto University, Kyoto daigaku-Katsura, Nishikyo-ku, Kyoto 615-8530, Japan;3. Graduate School of Engineering, Chiba University, Yayoi 1-33, Inage, Chiba 263-8522, Japan;4. Nuclear Fuel Cycle Engineering Lab., Japan Atomic Energy Agency, 4-33, Muramatsu, Tokai, Ibaraki 319-1194, Japan;1. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;2. Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;3. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;4. Manufacturing Engineering and Technologies Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;5. Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA;6. Department of Physics, University of Washington, Seattle, WA 98195, USA;7. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA;1. Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, Guntur, A.P., India;2. Department of Physics, Kakani Venkata Ratnam College, Nandigama 521 185, A.P., India;3. Food Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India;4. Institute of Physics, J. Dlugosz University, Ul. Armii Krajowej 13/15, 42-201 Czestochowa, Poland
Abstract:Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented.
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