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超导HEB的I-V特性模拟
引用本文:范翠,金飚兵,康琳,许伟伟,陈健,吴培亨.超导HEB的I-V特性模拟[J].低温与超导,2008,36(10).
作者姓名:范翠  金飚兵  康琳  许伟伟  陈健  吴培亨
作者单位:南京大学电子科学与工程系超导电子学研究所,210093
基金项目:国家重点基础研究发展计划(973计划)
摘    要:超导热电子测热辐射仪(Superconducting Hot-electron Bolom eter,HEB)是一种检测器件,可以对1THz以上的电磁辐射进行高灵敏度的检测。该工作是利用双温模型,假设电子和声子各自处在平衡态,但具有不同的温度,根据热平衡原理,计算出电子和声子温度在HEB桥上的分布,得到桥两端的电压值,从而得出器件的I-V特性。分析了实验环境温度,转变宽度和薄膜厚度对器件I-V的要求,并与实验测量的结果相比较,为进一步研究超导HEB的混频特性打下基础。

关 键 词:超导热电子测热辐射仪(HEB)  双温模型  I-V特性  太赫兹检测

I-V characteristic of phonon-cooled hot-electron bolometer
Fan Cui,Jin Biaobing,Kang Lin,Xu Weiwei,Chen Jian,Wu Peiheng.I-V characteristic of phonon-cooled hot-electron bolometer[J].Cryogenics and Superconductivity,2008,36(10).
Authors:Fan Cui  Jin Biaobing  Kang Lin  Xu Weiwei  Chen Jian  Wu Peiheng
Abstract:A superconducting hot-electron bolometer(HEB) is a high sensitivity device for the electromagnetic radiation above 1 THz.In this paper,using the dual temperature model in which the electron and phonon were assumed in equilibrium state independently,the authors could get a set of coupled equations describing the spatial profile of the electron and the phonon temperature along the bridge.The current-voltage(I-V) characteristic could be calculated by solving the equations.The authors analyzed the influences of the ambient temperature of the device,the transition width and the thickness of the superconducting bridge on the I-V curves,and then compared them with the measured results.
Keywords:HEB  Dual temperature model  I-V characteristic  THz detection
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