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Mn掺杂对多铁性BiFeO_3薄膜铁电性能以及漏电流的影响
引用本文:訾玉宝,焦兴利,王海峰,刘亲壮,殷志珍,张福恒,黄振,吴文彬.Mn掺杂对多铁性BiFeO_3薄膜铁电性能以及漏电流的影响[J].低温物理学报,2009(4).
作者姓名:訾玉宝  焦兴利  王海峰  刘亲壮  殷志珍  张福恒  黄振  吴文彬
作者单位:合肥微尺度物质科学国家实验室(筹);中国科学技术大学;
摘    要:本文利用脉冲激光沉积技术在(LaAlO3)0.3(Sr2AlTaO6)0.7(001)衬底上生长了BiFe1-xMnxO3(x=0~5%)外延薄膜,研究了Mn掺杂对BiFeO3(BFO)薄膜结构、铁电特性和漏电流的影响.XRD和SEM结果表明薄膜具有良好的结晶质量.漏电流测量显示Mn掺杂有效地减小了BFO薄膜的漏电流密度,因而在室温下5%Mn掺杂的BFO薄膜能够获得饱和的电滞回线.XPS分析证明,Mn掺杂改善BFO薄膜性能的可能原因在于其极大地减少了BFO薄膜中的Fe2+离子.

关 键 词:铁酸铋  多铁  铁电  漏电流密度  锰掺杂  脉冲激光沉积  

EFFECTS OF MN-DOPING ON THE FERROELECTRIC AND LEAKAGE PROPERTIES OF MULTIFERROIC BiFe_(1-x)Mn_xO_3 THIN-FILMS
ZI Yu-bao JIAO Xing-li WANG Hai-feng LIU Qin-zhuang YIN Zhi-zheng ZHANG Fu-heng HUANG Zhen WU Wen-bin Hefei National Laboratory for Physical Sciences at Microscale,University ofScience , Technology of China,Hefei.EFFECTS OF MN-DOPING ON THE FERROELECTRIC AND LEAKAGE PROPERTIES OF MULTIFERROIC BiFe_(1-x)Mn_xO_3 THIN-FILMS[J].Chinese Journal of Low Temperature Physics,2009(4).
Authors:ZI Yu-bao JIAO Xing-li WANG Hai-feng LIU Qin-zhuang YIN Zhi-zheng ZHANG Fu-heng HUANG Zhen WU Wen-bin Hefei National Laboratory for Physical Sciences at Microscale  University ofScience  Technology of China  Hefei
Institution:ZI Yu-bao JIAO Xing-li WANG Hai-feng LIU Qin-zhuang YIN Zhi-zheng ZHANG Fu-heng HUANG Zhen WU Wen-bin Hefei National Laboratory for Physical Sciences at Microscale,University ofScience and Technology of China,Hefei 230026
Abstract:Mn-doped BiFeO3 films have been grown on(LaAlO3)0.3(Sr2AlTaO6)0.7(001)substrates by the pulsed laser deposition method,and the effects of Mn-doping on their leakage and ferroelectric properties were investigated.The current density versus electric field curves measured from the Mn-doped and undoped BFO epitaxial films indicate that the Mn-doping can effectively suppress the leakage current.As a result,we got well-saturated polarization-electric field hysteresis-loops in 5% Mn-doped BFO film at room temperat...
Keywords:BiFeO3  multiferroic  ferroelectric loops  leakage current  Mn-doping  PLD  
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