基于NbN，AIN技术的体声波器件研究

体声波滤波器由于其低插损、小尺寸、高带外抑制等特性，随着第三代移动通信以及蓝牙技术的发展而得到广泛研究，而MEMS技术和压电薄膜制备技术的进一步发展使高性能的体声波滤波器制作成为可能．我们以单晶MgO作为器件衬底，MgO/NbN多层结构作为AIN薄膜体声波器件的反射器，NBN／AIN／NbN三层结构为谐振器．在这样的多层结构的设计中由于各种材料之间的晶格失配小，可以获得从几十纳米到几百纳米厚度不等的单晶AIN薄膜．通过控制AIN薄膜和NbN薄膜的不同厚度，可以获得不同频段范围的谐振器．压电薄膜的质量，以及体声波在多层结构界面上的能量损耗，直接影响到谐振器电学性能．基于AIN材料的压电性能，设计了NBN／AIN／NBN三层结构的谐振器，并进行了数值模拟．

STUDY OF BAW RESONATOR USING TECHNOLOGY OF NbN AIN

Along with the devolopment of 3G mobile communication and bluetooth technology,BAW flilter have been widely researched because of its low insertloss, small size, high restrain out of band etc. More development of MEMS technology and Piezoelectronics thin flim prepration technology make it possible that make the BAW flilters of high performanee. We use the sigle crystal MgO as flilter substrate, MgO/NbN multiplayer as reflector of BAW fliter, NbN/AlN/NbN sandwich structure as resonator. In this design of mutillayer, crystal lattice dismatch of every layer is small, we can acquire single crystal AIN film with the thickness from several decade to several hundred nanometers. We can acquire resonators of different frequency, by controlling the thickness of AlN flim and NbN film. The quality of piezoelectronic flim, BAW energy spoilage in multiplayer interface,can directly affect electronics performance of resonator. Because of piezoelectronie capability of AlN film, we design NbN/AlN/NbN sandwich structure resonator, and make theory simulation.