| 磁通量子比特qubit信号强度随势垒偏置电压的变化 |
| |
| 引用本文： | 窦伟平,花涛,王轶文,许伟伟,丛山桦,孙国柱,于扬,吴培亨.磁通量子比特qubit信号强度随势垒偏置电压的变化[J].低温物理学报,2011(1):15-19. |
| |
| 作者姓名： | 窦伟平 花涛 王轶文 许伟伟 丛山桦 孙国柱 于扬 吴培亨 |
| |
| 作者单位： | 南京大学超导电子学研究所;南京大学固体微结构国家实验室; |
| |
| 基金项目： | 国家自然科学基金(批准号:10874074,200802840031); 科技部重大基础研究计划973计划(批准号:2006CB601006,2007CB310404); 教育部博士点基金(批准号:200802840031)资助的课题~~ |
| |
| 摘 要： | 在20mK极低温下,测量了超导磁通量子比特的环流方向,并测到量子比特(qubit)信号.通过改变磁通量子比特的势垒高度,得到qubit信号强度随势垒高度的变化的实验数据并建立理论模型解释了实验现象.
|
| 关 键 词： | 超导磁通量子比特 qubit信号强度 qubit势垒高度 |
RELATIONSHIP BETWEEN FLUX QUBIT SIGNAL MAGNITUDE AND BARRIER BIASVOLTAGE |
| |
| DOU Wei-ping HUA Tao WANG Yi-wen XU Wei-wei CONG Shan-hua SUN Guo-zhu YU Yang WU Pei-heng Research Institute of Superconductor Electronics,Nanjing University,Nanjing National Laboratory of Solid State Microstructures.RELATIONSHIP BETWEEN FLUX QUBIT SIGNAL MAGNITUDE AND BARRIER BIASVOLTAGE[J].Chinese Journal of Low Temperature Physics,2011(1):15-19. |
| |
| Authors: | DOU Wei-ping HUA Tao WANG Yi-wen XU Wei-wei CONG Shan-hua SUN Guo-zhu YU Yang WU Pei-heng Research Institute of Superconductor Electronics Nanjing University Nanjing National Laboratory of Solid State Microstructures |
| |
| Institution: | DOU Wei-ping1 HUA Tao1 WANG Yi-wen2 XU Wei-wei1 CONG Shan-hua1 SUN Guo-zhu1 YU Yang2 WU Pei-heng1 1Research Institute of Superconductor Electronics,Nanjing University,Nanjing 210093 2National Laboratory of Solid State Microstructures and Department of Physics,Nanjing 210093 |
| |
| Abstract: | At the extremely low temperature of 20mK,We measured the superconducting flux qubit loop current with DC-SQUID,and find the qubit signal.Then we changed the barrier bias voltage of the flux qubit and did measurements with each barrier height to get the relationship between flux qubit signal magnitude and the barrier bias voltage.We also build up a theory model to explain the Experimental phenomena. |
| |
| Keywords: | flux qubit qubit signal magnitude barrier bias voltage |
| 本文献已被 CNKI 等数据库收录！ |
