| La0.7Sr0.3MnO3外延膜缺陷性质的慢正电子束研究 |
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| 引用本文： | 金绍维,顾伟伟,周先意,吴文彬,翁惠民,朱长飞,叶邦角,韩荣典.La0.7Sr0.3MnO3外延膜缺陷性质的慢正电子束研究[J].低温物理学报,2004,26(2):95-100. |
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| 作者姓名： | 金绍维 顾伟伟 周先意 吴文彬 翁惠民 朱长飞 叶邦角 韩荣典 |
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| 作者单位： | 中国科学技术大学近代物理系,合肥,230027;中国科学技术大学结构分析重点实验室,合肥,230026;中国科学技术大学材料科学与工程系,合肥,230026 |
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| 摘 要： | 用单能慢正电子束,测量了不同氧分压下生长的La0.7Sr0.3MnO3外延膜的S参数与入射正电子能量E的关系.结果发现La0.7Sr0.3MnO3外延膜中S参数与氧分压是非单调变化的;这与沉积氧分压的两种作用相关联的.在氧分压较高的LSMO薄膜中, 空位浓度的增加主要是由沉积原子(离子)与氧原子碰撞几率增大,使其缺乏足够的动能去填补空位引起的;在低氧分压的LSMO薄膜中, 空位浓度的增大则主要是提供成膜所需要的氧原子缺乏,从而导致氧空位及其相关缺陷增加.
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| 关 键 词： | 缺陷性质 外延薄膜 增电子湮灭 |
DEFECT PROPERTIES OF THE La0.7Sr0.3MnO3 EPITAXIAL FILMS STUDIED BY VARIABLE ENERGY POSITRON BEAM |
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| JIN SHAO-WEI GU WEI-WEIZHOU XIAN-YI WU WEN-BIN WENG HUI-MIN ZHU CHANG-FEI YE BANG-JIAO HAN RONG-DIAN.DEFECT PROPERTIES OF THE La0.7Sr0.3MnO3 EPITAXIAL FILMS STUDIED BY VARIABLE ENERGY POSITRON BEAM[J].Chinese Journal of Low Temperature Physics,2004,26(2):95-100. |
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| Authors: | JIN SHAO-WEI GU WEI-WEIZHOU XIAN-YI WU WEN-BIN WENG HUI-MIN ZHU CHANG-FEI YE BANG-JIAO HAN RONG-DIAN |
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| Institution: | JIN SHAO-WEI+1 GU WEI-WEI+1ZHOU XIAN-YI+1 WU WEN-BIN+2 WENG HUI-MIN+1 ZHU CHANG-FEI+3 YE BANG-JIAO+1 HAN RONG-DIAN+1 +1Department of Modern Physics,University of Science and Technology of China,Hefei 230027 +2Structure Research Laboratory,University of Science and Technology of China,Hefei 230026 +3Department of Materials Science and Engineering,University of Science and Technology of China,Hefei 230026 |
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| Abstract: | By using a variable energy positron beam system, the linear S parameter as a function of implantation positron energy was measured on the epitaxial La-{0.7}Sr-{0.3}MnO-3 thin-films from different deposition oxygen pressures. It is found that the relationship between the S parameters of the epitaxial La-{0.7}Sr-{0.3}MnO-3 films and oxygen pressures is not monotonous. This relationship is related to the actions of the deposition oxygen pressure. For the La-{0.7}Sr-{0.3}MnO-3 film was prepared by the high growth oxygen pressure, the increase of the vacancy concentration is caused from the large collision faction of the deposition atom and oxygen atom. In contrast, for the film prepared by the low growth oxygen pressure, the increase of the vacancy concentration is caused from the oxygen atom deficiency during the film growth and resulted in the oxygen vacancies and the related defect complexes. |
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| Keywords: | defect properties epitaxial films positron annihilation |
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