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MgO(111)上NbN和AlN薄膜的生长研究
引用本文:陈亚军,康琳,蔡卫星,施建荣,赵少奇,吉争鸣,吴培亨.MgO(111)上NbN和AlN薄膜的生长研究[J].低温物理学报,2005,27(3):207-210.
作者姓名:陈亚军  康琳  蔡卫星  施建荣  赵少奇  吉争鸣  吴培亨
作者单位:南京大学电子科学与工程系超导电子学研究所,南京,210093
摘    要:在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.

关 键 词:磁控溅射  c轴取向
收稿时间:10 15 2004 12:00AM
修稿时间:2004年10月15

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE
CHEN Ya-jun,KANG Lin,CAI WEI-XING,SHI Jian-rong,ZHAO SHAO-QI,JI ZHENG-MING,WU PEI-HENG.EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE[J].Chinese Journal of Low Temperature Physics,2005,27(3):207-210.
Authors:CHEN Ya-jun  KANG Lin  CAI WEI-XING  SHI Jian-rong  ZHAO SHAO-QI  JI ZHENG-MING  WU PEI-HENG
Abstract:In the fabrication processing of a good NbN/AlN/NbN tunneling junction, the NbN film of high-quality single crystalline structure is necessary to be obtained. At ambient temperature, we deposit NbN thin film onto (111)MgO substrate by using direct-current magnetron sputtering, and the technological conditions of the growth of NbN is reported. X-ray diffraction(XRD) pattrens show that the NbN film grown on (111)MgO substrate has an excellent single crystalline structure. To hold the growth of NbN thin film used as upper electrode, a good AlN thin film is needed for the barrier of SIS device. Using radio-frequency magnetron sputtering and pure Al target, the AlN thin film is obtained. XRD patterns show that the AlN thin film grown on (111)MgO substrate has a c-axis orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.
Keywords:NbN  AlN  XRD
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