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飞秒激光烧蚀硅表面产生微纳结构过程中激光脉冲数目的影响
引用本文:阮召菘,彭滟,朱亦鸣,何波涌.飞秒激光烧蚀硅表面产生微纳结构过程中激光脉冲数目的影响[J].光学技术,2011,37(2):245-248.
作者姓名:阮召菘  彭滟  朱亦鸣  何波涌
作者单位:1. 上海交通大学,微电子学院,上海,200240
2. 上海理工大学,光电信息与训薄机工程学院,教育部光学仪器与系统工程研究中心,上海,200093
3. 上海交通大学,微电子学院,上海,200240;上海理工大学,光电信息与训薄机工程学院,教育部光学仪器与系统工程研究中心,上海,200093
基金项目:上海市教育发展基金会曙光计划项目,上海市科委纳米技术专项基金资助项目,上海市科委浦江人才计划项目,上海市教育委员会科研创新项目,国家教育部博士点新教师基金项目,教育部留学回国科研启动基金
摘    要:为了研究飞秒激光脉冲数目与硅表面形貌之间的关系,在相同的SF6气体氛围下,改变照射硅表面的飞秒激光脉冲数,发现在飞秒激光照射下由硅表面形成的微型锥状尖峰的高度与飞秒激光脉冲数呈现一种非线性关系.通过对该关系的研究有利于找出在制造具有较高吸收效率的高微型锥状尖峰的"黑硅"的实验条件,有利于基于"黑硅"材料的光电器件转化效...

关 键 词:光学材料  飞秒激光脉冲  硅表面微型结构  等离子体增强刻蚀

Influence of the number of femtosecond laser pulses on femtosecond laser ablation silicon surface producing micro-nano structure
RUAN Zhaosong,PENG Yan,ZHU Yiming,HE Boyong.Influence of the number of femtosecond laser pulses on femtosecond laser ablation silicon surface producing micro-nano structure[J].Optical Technique,2011,37(2):245-248.
Authors:RUAN Zhaosong  PENG Yan  ZHU Yiming  HE Boyong
Institution:1 (1.School of Microelectronics,Shanghai JiaoTong University,Shanghai 200240,China)(2.Optical Instrument and Systems Engineering Research Center,Ministry of Education, School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)
Abstract:To study the relationship between microstructuring of silicon and the number of femtosecond laser pulses,the number of femtosecond laser pulses irradiating the silicon is changed within the same atmosphere of SF6,it is find that there is a non-linear relationship between the height of the micro-cones and the number of femtosecond laser pulses.The study of this relationship is helpful to determine the experiment condition of fabricating "black silicon" with high micro-cones for high absorption,and the conversion efficiency of the electro-optical devices is improved.
Keywords:optical materials  femtosecond laser pulses  silicon surface microstructure  plasmas enhanced etching
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