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用模拟退火算法研究非晶硅薄膜的光学性质
引用本文:晏春愉,高斐,张佳雯,方晓玲,刘伟.用模拟退火算法研究非晶硅薄膜的光学性质[J].光学技术,2009,35(4).
作者姓名:晏春愉  高斐  张佳雯  方晓玲  刘伟
作者单位:陕西师范大学,物理与信息技术学院,西安,710062
摘    要:在玻璃衬底上采用等离子体增强的化学气相沉积(PECVD)法制备了非晶硅薄膜(A-Si:H)。用紫外-可见-近红外分光光度计测出了其透射光谱。采用模拟退火算法研究了透射光谱,得出了薄膜的厚度、折射率和吸收系数随波长变化的关系式、光学带隙等光学常数,并对该方法的优缺点进行了讨论。

关 键 词:非晶硅薄膜(A-Si:H)  模拟退火算法  透射光谱  光学常数

Study on the optical properties of amorphous silicon film by simulated annealing algorithm
YAN Chun-yu,GAO Fei,ZHANG Jia-wen,FANG Xiao-ling,LIU Wei.Study on the optical properties of amorphous silicon film by simulated annealing algorithm[J].Optical Technique,2009,35(4).
Authors:YAN Chun-yu  GAO Fei  ZHANG Jia-wen  FANG Xiao-ling  LIU Wei
Institution:YAN Chun-yu,GAO Fei,ZHANG Jia-wen,FANG Xiao-ling,LIU Wei(School of Physics Information Technology,Shaanxi Normal University,Xi'an 710062,China)
Abstract:A-Si:H film is deposited on glass by plasma enhanced chemical vapor deposition(PECVD).Transmission spectra of the film are measured by the UV-VIS-NIR spectrophotometer.Thickness,reflection index,absorption coefficient and optical band gap of the film are obtained by studying the transmission spectra using simulated annealing algorithm,the advantages of this method are discussed.
Keywords:H)
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