Effect of the RE ionic size on the REBa2Cu3O7−δ ceramics oxygenated at 250 bar

REBa₂Cu₃O_7?δ (RE=Ho, Y, Dy, Gd, Sm, Nd) ceramics have been oxygenated at 1 bar pressure (LP) and, subsequently, at 250 bar (HP). Despite the noticed slight uptake of oxygen (up to the value of 0.07), after the HP processing, the electrical resistivity (ρ) of all samples increased, what was attributed to the deterioration of the grain boundaries. The increase of ρ was much more pronounced and also accompanied by a change of ρ(T) characteristics into a semiconducting-like one in the case of 123 compounds based on REs which ionic size is large enough to form solid solutions of RE_1+xBa_2?xCu₃O_y type (i.e., RE=Gd, Sm, Nd). As shown in the literature, such 123s usually contain more structural defects. Thus, the observed effect may be attributed to the migration of the defects induced by the elevated pressure oxygenation. The defects could be trapped near the grain boundaries resulting in the deterioration of their electrical properties. The possible role of the oxygen-pressure-induced modifications of the impurity phases has been also discussed. The materials obtained in the HP process may be regarded as 3D arrays of superconducting grains coupled by the Josephson junction or weak links only, as was shown in a tunneling experiment.