Novel metallic behavior in two dimensions |
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Authors: | Feng X G Popović D Washburn S Dobrosavljević V |
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Institution: | National High Magnetic Field Laboratory, Florida State University, Tallahassee 32310, USA. |
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Abstract: | Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma(n(s),T) = sigma(n(s),T = 0)+A(n(s))T(2) (where n(s) is carrier density) to a nonzero value as temperature T-->0. In 2D, the existence of a metal with dsigma/dT>0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D. |
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