Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm |
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| Authors: | P B Meng B Q Yao R L Zhou F Chen Y L Ju Y Z Wang |
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| Institution: | 1.National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin,China |
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| Abstract: | Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency
output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%. |
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