The junction temperature and forward voltage relationship of GaN-based laser diode |
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Authors: | Y T Liu Q Cao G F Song L H Chen |
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Institution: | (1) Nano Optoelectronic Lab., Institute of Semiconductors, Chinese Academy of Sciences, Bejing, 100083, China |
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Abstract: | In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M g in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won’t lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too. |
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