| 热解温度对溶胶-凝胶法制备B掺杂ZnO薄膜晶化行为及性能的影响 |
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| 引用本文： | 文斌,刘超前,王楠,王华林,刘世民,姜薇薇,丁万昱,费维栋,柴卫平.热解温度对溶胶-凝胶法制备B掺杂ZnO薄膜晶化行为及性能的影响[J].化学物理学报,2016,29(2):229-233. |
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| 作者姓名： | 文斌 刘超前 王楠 王华林 刘世民 姜薇薇 丁万昱 费维栋 柴卫平 |
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| 作者单位： | 大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,大连交通大学材料科学与工程学院, 大连 116028,哈尔滨工业大学材料科学与工程学院, 哈尔滨 150001;青海大学机械工程学院, 西宁 810016,大连交通大学材料科学与工程学院, 大连 116028 |
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| 基金项目： | This work was supported by the National Natural Science Foundation of China (No.51302024, No.51002018 and No.51472039), the Program for Liaoning Excellent Talents in University (No.LJQ2012038), the Higher Specialized Research Fund for the Doctoral Program (No.20122124110004), the Project of Education Department of Liaoning Province (No.L2013179), the Project of Open Research Foundation of State Key Laboratory of Advanced Technology for Float Glass (No.KF1301-01), the Dalian Science and Technology Plan Project (No.2011A15GX025), the Dalian Science and Technology Plan Project (No.2010J21DW008), and the Qinghai Province Science and Technology Project (No.2012-Z-701). |
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| 摘 要： | 采用溶胶-凝胶方法制备了B掺杂ZnO(BZO)薄膜,系统研究了热解温度对薄膜的结晶行为和性能的影响. X射线衍射谱表明所有的BZO薄膜均具有六方纤锌矿结构,并沿c轴方向择优生长. 随着热解温度的升高,BZO薄膜的晶粒尺寸和RMS粗糙度增加. BZO薄膜的载流子浓度和载流子迁移率也随着热解温度的升高而增加,其可见光平均透过率均在90%以上.
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| 关 键 词： | 透明导电氧化物 薄膜 B掺杂ZnO 热解温度 溶胶-凝胶 |
| 收稿时间： | 2015/6/11 0:00:00 |
| 修稿时间： | 2015/8/14 0:00:00 |
Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures |
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| Bin Wen,Chao-qian Liu,Nan Wang,Hua-lin Wang,Shi-min Liu,Wei-wei Jiang,Wan-yu Ding,Wei-dong Fei and Wei-ping Chai.Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures[J].Chinese Journal of Chemical Physics,2016,29(2):229-233. |
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| Authors: | Bin Wen Chao-qian Liu Nan Wang Hua-lin Wang Shi-min Liu Wei-wei Jiang Wan-yu Ding Wei-dong Fei and Wei-ping Chai |
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| Institution: | Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China,School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;School of Mechanical Engineering, Qinghai University, Xining 810016, China and Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China |
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| Abstract: | Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range. |
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| Keywords: | Transparent conduction oxide Thin film Boron-doped ZnO Pyrolysis temperature Sol-gel |
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