Nondoped-type White Organic Light-Emitting Diode Using Star-Shaped Hexafluorenylbenzene as an Energy Transfer Layer

采用真空蒸镀的方法以星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene(HKEthFLYPh)作为能量传输层制备了indium-tin-oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-(1,1'-biphenyl)-4,4′-diamine(NPB)/HKEthFLYPh/5,6,11,12-tetraphenylnaphtacene(rubrene)/tris(8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag的白色有机电致发光器件. NPB和Alq3分别作为蓝色发光层和电子传输层，NPB和Alq3之间的超薄Rubrene层 作为黄色发光层. 结果表明，超薄rubrene层改善了白光器件的色纯度与稳定性，器件的光谱及色坐标几乎不随驱动电压的变化而改变.当rubrene层厚度为0.3 nm时，器件的Commissions Internationale De L′Eclairage (CIE)色坐标为(0.32，0.33). 驱动电压为18 V时，器件的最大亮度为4816 cd/m2.

Nondoped-type White Organic Light-Emitting Diode Using Star-Shaped Hexafluorenylbenzene as an Energy Transfer Layer

White organic light-emitting diodes (WOLEDs) with a structure of indium-tin-oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB)/1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene (HKEthFLYPh)/5,6,11,12 -tetraphenylnaphtacene (rubrene)/tris(8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag were fabricated by vacuum deposition method, in which a novel star-shaped hexafluorenylbenzene HKEthFLYPh was used as an energy transfer layer, and an ultrathin layer of rubrene was inserted between HKEthFLYPh and Alq3 layers as a yellow light-emitting layer instead of using a time-consuming doping process. A fairly pure WOLED with Commissions Internationale De L'Eclairage (CIE) coordinates of (0.32, 0.33) was obtained when the thickness of rubrene was 0.3 nm, and the spectrum was insensitive to the applied voltage. The device yielded a maximum luminance of 4816 cd/m2 at 18 V.