| 铋纳米线中电导的温度依赖性 |
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| 引用本文： | 霍鹏程,费广涛,张阳,张立德.铋纳米线中电导的温度依赖性[J].化学物理学报,2015,28(1):79-83. |
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| 作者姓名： | 霍鹏程 费广涛 张阳 张立德 |
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| 作者单位： | 中国科学院合肥物质科学研究院固体物理研究所，中国科学院材料物理重点实验室，安徽省纳米材料与纳米技术重点实验室，合肥 230031,中国科学院合肥物质科学研究院固体物理研究所，中国科学院材料物理重点实验室，安徽省纳米材料与纳米技术重点实验室，合肥 230031,中国科学院合肥物质科学研究院固体物理研究所，中国科学院材料物理重点实验室，安徽省纳米材料与纳米技术重点实验室，合肥 230031,中国科学院合肥物质科学研究院固体物理研究所，中国科学院材料物理重点实验室，安徽省纳米材料与纳米技术重点实验室，合肥 230031 |
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| 摘 要： | 采用电沉积的方法在多孔氧化铝模板中合成了直径为30 nm且沿着0112]方向生长的单晶铋纳米线，测量了纳米线电导随着温度78～320 K变化的关系曲线. 结果发现，其半金属半导体转变的温度为230 K，且纳米线的电导有很强的温度依赖性.
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| 关 键 词： | 铋纳米线，半金属半导体转变，电导 |
| 收稿时间： | 2014/9/30 0:00:00 |
Temperature-Dependent Electrical Conductance of Bi Nanowires |
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| Peng-cheng Huo,Guang Tao Fei,Yang Zhang and Li-de Zhang.Temperature-Dependent Electrical Conductance of Bi Nanowires[J].Chinese Journal of Chemical Physics,2015,28(1):79-83. |
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| Authors: | Peng-cheng Huo Guang Tao Fei Yang Zhang and Li-de Zhang |
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| Institution: | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China,Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China,Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China and Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | The single crystal bismuth nanowire arrays grown along 0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi-tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along 01112] and the electric con-ductance of the nanowires had a strong temperature dependence. |
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| Keywords: | Bismuth nanowire Semimetal-to-semiconductor transition Electric conduc-tance |
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