| 通过氧化物前驱体非真空方法制备高质量CuInSe2薄膜 |
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| 引用本文： | 蒋帅,江国顺,刘伟峰,朱长飞.通过氧化物前驱体非真空方法制备高质量CuInSe2薄膜[J].化学物理学报,2010,23(5):587-590. |
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| 作者姓名： | 蒋帅 江国顺 刘伟峰 朱长飞 |
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| 作者单位： | 中国科学技术大学材料科学与工程系，中国科学院能量转化材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转化材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转化材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转化材料重点实验室，合肥230026 |
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| 摘 要： | 通过非真空工艺利用CuO、In2O3混合氧化物制备CuInSe2薄膜太阳能电池中的吸收层CuInSe2薄膜. 利用柠檬酸法制备出粒径在100 nm以下的CuO、In2O3混合氧化物纳米粉，在浆料中加入过量的硒，用来创造非平衡的反应条件促进氧化物的还原和硒化. 考察了影响硒化的几个反应条件，最优的硒化条件为1.9 kPa的Se蒸汽压中，550 °C硒化60 min.
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| 关 键 词： | 薄膜，CuInSe2，非真空，纳米颗粒 |
| 收稿时间： | 2/9/2010 12:00:00 AM |
Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process |
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| Shuai Jiang,Guo-shun Jiang,Wei-feng Liu and Chang-fei Zhu.Synthesis of High Quality CuInSe2 Films with Oxygen Precursor by Non-vacuum Process[J].Chinese Journal of Chemical Physics,2010,23(5):587-590. |
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| Authors: | Shuai Jiang Guo-shun Jiang Wei-feng Liu and Chang-fei Zhu |
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| Institution: | CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | The CuInSe2 absorber was synthesized by non-vacuum process with a simple and low-cost method, which fabricated absorber layer of thin-film solar cell. The extra amount of Se was added into the ink to help reduction of the oxide and solid Se fountain was used to provide Se atmosphere during the selenization progress. The influence of same factors was investigated, such as the time of reduction in H2, the time of selenization and the Se vapor pressure. The selenizaion, processed at 550 °C for 60 min with the Se vapor pressure at 1.90 kPa, resulted in high quality CuInSe2 layer with very good chemical composition. |
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| Keywords: | Thin film CuInSe2 Non-vacuum Nanoparticle |
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