| Bi2Te3/Sb超晶格纳米线的外延生长和热电测量 |
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| 引用本文： | 李亮,许思超,李广海.Bi2Te3/Sb超晶格纳米线的外延生长和热电测量[J].化学物理学报,2016,29(3):365-368. |
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| 作者姓名： | 李亮 许思超 李广海 |
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| 作者单位： | 中国科学院固体物理研究所, 中国科学院材料物理重点实验室, 安徽省纳米材料与技术重点实验室, 合肥 230031,中国科学院固体物理研究所, 中国科学院材料物理重点实验室, 安徽省纳米材料与技术重点实验室, 合肥 230031,中国科学院固体物理研究所, 中国科学院材料物理重点实验室, 安徽省纳米材料与技术重点实验室, 合肥 230031;中国科学技术大学化学与材料科学学院, 合肥 230026 |
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| 基金项目： | This work was supported by the National Natural Science Foundation of China (No.11174285). |
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| 摘 要： | 通过脉冲电沉积,外延生长出小单元长度的Bi2Te3/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi2Te3/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.
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| 关 键 词： | Bi2Te3 超晶格纳米线 电沉积 热电 哈曼技术 |
| 收稿时间： | 2015/9/21 0:00:00 |
| 修稿时间： | 2015/11/23 0:00:00 |
Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires |
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| Liang Li,Si-chao Xu and Guang-hai Li.Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires[J].Chinese Journal of Chemical Physics,2016,29(3):365-368. |
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| Authors: | Liang Li Si-chao Xu and Guang-hai Li |
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| Institution: | Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China,Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China and Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays. |
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| Keywords: | Bi2Te3 Superlattice nanowires Electrodeposition Thermoelectric Harman technique |
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