| 门电场对有机单分子器件的影响 (cited: 3) |
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| 引用本文： | 李宗良,傅潇潇,张广平,王传奎.门电场对有机单分子器件的影响 (cited: 3)[J].化学物理学报,2013,26(2):185-190. |
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| 作者姓名： | 李宗良 傅潇潇 张广平 王传奎 |
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| 作者单位： | 山东师范大学物理与电子科学学院，济南250014;山东师范大学物理与电子科学学院，济南250014;山东师范大学物理与电子科学学院，济南250014;山东师范大学物理与电子科学学院，济南250014 |
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| 摘 要： | 基于第一性原理和弹性散射格林函数方法，从理论上研究了门电场对一系列有机单分子结的电输运性质的影响. 结果显示，含有氧化还原中心并且在门电场方向具有较大电偶极矩的分子结能够对门电场有显著响应. 2,5-二甲基噻吩二硫醇的伏安特性显示了类似N-沟道金属氧化物半导体管性质. 这一独特的伏安特性可以从能级、耦合能以及原子电荷随门电场的演化来理解.
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| 关 键 词： | 门电场，分子结，电输运性质 |
| 收稿时间： | 2/2/2012 12:00:00 AM |
Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3) |
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| Zong-liang Li,Xiao-xiao Fu,Guang-ping Zhang and Chuan-kui Wang.Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)[J].Chinese Journal of Chemical Physics,2013,26(2):185-190. |
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| Authors: | Zong-liang Li Xiao-xiao Fu Guang-ping Zhang and Chuan-kui Wang |
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| Institution: | College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China;College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China;College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China;College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China |
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| Abstract: | Based on the first-principles computational method and elastic scattering Green's function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductor-like characteristics. Its distinct current-voltage properties can be understood from the evo-lution of eigenvalues, coupling energies, and atomic charges with gate electric field. |
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| Keywords: | Gate electric field Molecular junction Electronic transport property |
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