X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films |
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| Institution: | 1. West Pomeranian University of Technology in Szczecin, Polymer Institute, ul. Pu?askiego 10, 70-322 Szczecin, Poland;2. West Pomeranian University of Technology in Szczecin, Department of Ship Safety Engineering, al. Piastów 41, 71-065 Szczecin, Poland;1. CEA, LIST, Diamond Sensors Laboratory, F-91191 Gif sur Yvette, France;2. Univ. Grenoble Alpes, LEPMI, F-38000 Grenoble, France;3. CNRS, LEPMI, F-38000 Grenoble, France;4. Centre des Matériaux, Mines ParisTech, CNRS, UMR 7633, BP 87, F-91003 Evry Cedex, France |
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| Abstract: | X-ray absorption and emission spectroscopic study at the Hf L1 edge was applied to investigate the local structure around hafnium atoms in Hf(Si)Ox ultra-thin films, which are the most promising candidates for the high-k gate dielectric material of next generation CMOS devices. HfSiOx showed an extra absorption above the Hf-L1 threshold, which is not seen in HfOx. HfSiOx also had stronger Compton scattering peak in Hf-Lγ emission region, and smaller Hf-Lγ2/Lγ3 ratio, compared with those of HfOx. These differences should be caused by partial replacements of hafnium atoms by silicon atoms as the second nearest neighbors of a hafnium atom. |
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