Optimization of preparation procedure of LiF:Mg,Cu,Si TLD for improving the reusability |
| |
| Authors: | JL Kim JI Lee AS Pradhan I Chang BH Kim KS Chung HS Choe |
| |
| Institution: | 1. Health Physics Department, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, South Korea;2. Bhabha Atomic Research Centre, Mumbai 400085, India;3. The Research Institute of National Science, Department of Physics, Gyeongsang National University, Jinju 660-701, South Korea |
| |
| Abstract: | Several thermal treatments in the temperature range from 270 °C to 320 °C (each of 10 min) were tested as a final preparation procedure of LiF:Mg,Cu,Si to improve the protocol of TL readout with less residual signal for the LiF:Mg,Cu,Si TLD. This high sensitivity LiF:Mg,Cu,Si TLD exhibited thermal stability much better than that of the well known LiF:Mg,Cu,P. For LiF:Mg,Cu,Si, a readout temperature up to 300 °C did not affect the TL sensitivity and glow curve structure for 12 cycles of exposure and readout following an initial thermal treatment at 295 °C for 10 min. The residual TL signal also remained negligible. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
