Synthesis of P-type transparent conducting silver:indium oxide (AIO) thin films by reactive electron beam evaporation technique |
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Authors: | A Subrahmanyam Ullash Kumar Barik |
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Institution: | Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology, Madras, Chennai 600 036, India |
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Abstract: | Present paper reports the synthesis, electrical and optical properties of p-type conducting and transparent silver indium oxide (AIO) thin films prepared on glass substrates by reactive electron beam evaporation technique at three substrate temperatures (50, 200 and 250 °C) and at five evaporation rates (0.05 to 16.0 nm/s). The source material is pure powders of Ag2O:In2O3=50:50 mol%. The AIO films are amorphous. The films, though not corresponding to Delafossite crystal structure, exhibit p-type conductivity, when prepared at an evaporation rate of 0.05 nm/s at all the three substrate temperatures. With increasing filament current, it is observed that (i) the electrical resistivity decreases and (ii) the refractive index of the films (at 632.8 nm, and is in the range: 1.219-1.211) decreases. The work function (effective Fermi level) has been measured on these samples by Kelvin Probe method. The results are explained on the basis of partial ionic charge and localization of covalent bonds in the AIO thin films. |
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Keywords: | Indium doped silver oxide thin films Electrical properties and measurements Electron beam evaporation Transparent conducting oxide (TCO) Work function |
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