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Preparation of Cu2ZnSnS4 thin films by hybrid sputtering |
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| Authors: | Tooru Tanaka Takeshi Nagatomo Mitsuhiro Nishio Akihiro Wakahara Hiroshi Ogawa |
| Institution: | a Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan b Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan c Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, Japan |
| Abstract: | In order to fabricate Cu2ZnSnS4 thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu2ZnSnS4 films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu2ZnSnS4 films with stoichiometric composition are obtained at the substrate temperature up to 400 °C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 °C. The Cu2ZnSnS4 film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu2ZnSnS4 film prepared in this experiment are suitable for fabricating a thin film solar cell. |
| Keywords: | A Semiconductors A Thin films D Optical properties |
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