首页 | 本学科首页   官方微博 | 高级检索  
     检索      

金属有机化学气相沉积法制备钛酸铅铁电薄膜
引用本文:孙力,陈延峰,于涛,闵乃本,姜晓明,修立松.金属有机化学气相沉积法制备钛酸铅铁电薄膜[J].物理学报,1996,45(10):1729-1736.
作者姓名:孙力  陈延峰  于涛  闵乃本  姜晓明  修立松
作者单位:(1)南京大学固体微结构国家重点实验室;微结构科学技术高等研究中心; (2)中国科学院高能物理研究所同步辐射实验室
基金项目:国家高技术研究发展计划资助的课题.
摘    要:利用低压MOCVD工艺分别在(001)取向的LaAlO,SrTiO和重掺杂硅单晶衬底上制备PbTiO铁电薄膜,并通过X射线衍射谱对薄膜的微结构进行分析.X射线θ-2θ扫描显示硅衬底上得到了PbTiO多晶薄膜,另两种衬底上得到了择优取向的PbTiO薄膜.LaAlO衬底上的PbTiO薄膜有a和c两个取向,也就是薄膜中存在着90°畴结构,而生长在SrTiO衬底上的PbTiO薄膜中只存在c方向的择优取向.由于薄膜的尺度效应,发现c轴晶格常数与块材相比均缩短.X射线的φ扫描验证了后两类薄膜的外延特性,利用同步辐射的高强度和高能量分辨率用摇摆曲线方法研究了这两种外延薄膜的品质,进一步证明了SrTiO衬底上的PbTiO薄膜的单畴特性.利用重掺杂的硅衬底作底电极,测量显示直接生长于硅衬底上的PbTiO多晶薄膜具有良好的铁电性能 关键词

关 键 词:钛酸铅  铁电薄膜  MOCVD
收稿时间:1995-06-29

PREPARATION AND CHARACTERIZATION OF PbTiO THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION
SUN LI,CHEN YAN-FENG,YU TAO,MING NAI-BEN,JIANG XIAO-MING and XIU LI-SONG.PREPARATION AND CHARACTERIZATION OF PbTiO THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION[J].Acta Physica Sinica,1996,45(10):1729-1736.
Authors:SUN LI  CHEN YAN-FENG  YU TAO  MING NAI-BEN  JIANG XIAO-MING and XIU LI-SONG
Abstract:PbTiO thin films were deposited on (001) redoping n-Si, (001) SrTiO substrates by low-pressure MOCVD technique, XRD θ-2θ scan shows that the film on Si substrate has a polycrystalline structure, while the other two films have preferential orientations and their epitaxial nature was confirmed by the X-ray φ scan, rocking curves of the two epitaxial thin films were taken at BSRF using the synchrotron radiation. The film on LaAlO substrate has an a,c domain coexisting structure, and the film on SrTiO substrate only has a c-orientation. All the films exhibit a c-axis shortening compare with the bulk material, and the reason can be attributed to the size effect and surface influence. The ferroelectric properties of the polycrystalline thin films were investigated using the redoping Si substrate as bottom electrode directly, and the PbTiO thin film shows a perfect hysteresis loop.
Keywords:
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号