| 纳米Ge颗粒镶嵌薄膜的Raman散射光谱研究 |
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| 引用本文： | 岳兰平,何怡贞.纳米Ge颗粒镶嵌薄膜的Raman散射光谱研究[J].物理学报,1996,45(10):1756-1761. |
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| 作者姓名： | 岳兰平 何怡贞 |
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| 作者单位： | (1)中国科学院固体物理研究所; (2)中国科学院固体物理研究所;中国科学技术大学结构分析开放研究实验室 |
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| 摘 要： | 研究了镶嵌在ＳｉＯ２介质中的不同尺寸（４—１６ｎｍ）纳米Ｇｅ颗粒的Ｒａｍａｎ散射谱特征，与大块标准Ｇｅ晶体的散射峰相比，观察到了理论预期的纳米半导体粒子的Ｒａｍａｎ散射峰的宽化和红移现象．采用声子限域模型较好地解释了实验结果．探讨了ＳｉＯ２介质基体作用于镶嵌Ｇｅ粒子的压应力以及纳米Ｇｅ粒子的表面界面效应对Ｒａｍａｎ散射光谱的峰形、峰位变化所产生的影响
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| 关 键 词： | 半导体 锗粒镶嵌 薄膜 散射谱 |
| 收稿时间： | 1995-08-31 |
A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN ＳｉＯ２ THIN FILMS |
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| YUE LAN-PING and HE YI-ZHEN.A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN ＳｉＯ２ THIN FILMS[J].Acta Physica Sinica,1996,45(10):1756-1761. |
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| Authors: | YUE LAN-PING and HE YI-ZHEN |
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| Abstract: | Raman scattering of Ge nanocrystallites from 4 to 16nm is size, embedded in ＳｉＯ２ thin films has been studied. The Ge-ＳｉＯ２ samples were prepared by ion-beam sputtering and a post-annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge-nanocrystallites on Raman spectra have also been investigated. |
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