| 一维随机成核生长模型 |
| |
| 引用本文： | 吴锋民,王衍,吴自勤.一维随机成核生长模型[J].物理学报,1996,45(12):1960-1969. |
| |
| 作者姓名： | 吴锋民 王衍 吴自勤 |
| |
| 作者单位： | (1)浙江工业大学; (2)中国科学技术大学基础物理中心 |
| |
| 摘 要： | 建立了一种一维随机成核生长模型，在三种不同的近邻条件下进行模拟，得到了一系列聚集生长图形，并计算了相应的分形维数．所得图形与多孔硅形成图样相似．对分形维数Ｄ随生长概率Ｘ变化的Ｄ-Ｘ曲线性质以及分形结构转变为均匀结构的临界阈值等作了初步的讨论
关键词：
|
| 关 键 词： | 薄膜生长 随机成核 |
| 收稿时间： | 1995-03-13 |
ONE-DIMENSIONAL RANDOM SUCCESSIVE NUCLEATION GROWTH MODEL |
| |
| WU FENG-MIN,WANG YAN and WU ZI-QIN.ONE-DIMENSIONAL RANDOM SUCCESSIVE NUCLEATION GROWTH MODEL[J].Acta Physica Sinica,1996,45(12):1960-1969. |
| |
| Authors: | WU FENG-MIN WANG YAN and WU ZI-QIN |
| |
| Abstract: | A computer simulation model of one dimensional random successive nucleation growth is presented. A series of patterns and their fractal dimensions are obtained for three near neighbor conditions. The simulated structures are similar to those of porous silicon. The properties of the D X curve and the critical threshold of the cluster change from fractal to uniform structure are also discussed briefly. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
