| SOI SONOS EEPROM 总剂量辐照阈值退化机理研究 |
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| 引用本文： | 李蕾蕾,于宗光,肖志强,周昕杰.SOI SONOS EEPROM 总剂量辐照阈值退化机理研究[J].物理学报,2011,60(9):98502-098502. |
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| 作者姓名： | 李蕾蕾 于宗光 肖志强 周昕杰 |
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| 作者单位： | (1)电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054;中国电子科技集团公司第五十八研究所,无锡 214035; (2)东南大学电子科学与工程学院,南京 210096; (3)西安电子科技大学微电子学院,西安 710071;中国电子科技集团公司第五十八研究所,无锡 214035 |
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| 基金项目： | 极大规模集成电路制造装备及成套工艺国家科技重大专项(批准号:2009ZX02306-04)资助的课题. |
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| 摘 要： | 阈值退化是器件特性退化最重要的表征.本文以研究SOI SONOS EEPROM器件的前栅和背栅阈值电压在辐照环境下的漂移为入手点,深入研究了在辐照情况下器件的退化;并从物理能带和载流子漂移的角度,分析了导致阈值电压漂移的物理机理,提出了提高器件性能的措施.
关键词：
SONOS EEPROM
SOI
辐照
能带
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| 关 键 词： | SONOS EEPROM SOI 辐照 能带 |
| 收稿时间： | 2010-10-17 |
Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation |
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| Li Lei-Lei,Yu Zong-Guang,Xiao Zhi-Qiang and Zhou Xin-Jie.Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation[J].Acta Physica Sinica,2011,60(9):98502-098502. |
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| Authors: | Li Lei-Lei Yu Zong-Guang Xiao Zhi-Qiang and Zhou Xin-Jie |
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| Institution: | 1)(School of Microelectronics, Xidian University, Xi’an 710071, China) 2)(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) 3)(School of Electronic Science and Engineering, South-East University, Nanjing 210096, China) 4)(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035, China) |
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| Abstract: | Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed. |
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| Keywords: | SONOS EEPROM SOI radiation physical bands |
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