| 纳米尺度MOSFET过剩噪声的定性分析 |
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| 引用本文： | 唐冬和,杜磊,王婷岚,陈华,陈文豪.纳米尺度MOSFET过剩噪声的定性分析[J].物理学报,2011,60(10):107201-107201. |
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| 作者姓名： | 唐冬和 杜磊 王婷岚 陈华 陈文豪 |
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| 作者单位： | 西安电子科技大学技术物理学院,西安 710071 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2010CB631002)资助的课题. |
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| 摘 要： | 最近实验表明纳米尺度MOSFET中的过剩噪声主要为散粒噪声,而此前研究认为MOSFET中不存在散粒噪声,短沟道MOSFET中的过剩噪声为热噪声. 本文基于器件电流模型分析散粒噪声取代热噪声成为过剩噪声主要成分的转变条件,根据该条件对纳米尺度MOSFET噪声特性的预测与文献报道的实验现象、模拟结果以及介观散粒噪声相关结论相符合.
关键词：
散粒噪声
过剩噪声
纳米尺度MOSFET
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| 关 键 词： | 散粒噪声 过剩噪声 纳米尺度MOSFET |
| 收稿时间： | 2010-08-29 |
| 修稿时间： | 1/4/2011 12:00:00 AM |
Qualitative analysis of excess noise in nanoscale MOSFET |
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| Tang Dong-He,Du Lei,Wang Ting-Lan,Chen Hua and Chen Wen-Hao.Qualitative analysis of excess noise in nanoscale MOSFET[J].Acta Physica Sinica,2011,60(10):107201-107201. |
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| Authors: | Tang Dong-He Du Lei Wang Ting-Lan Chen Hua and Chen Wen-Hao |
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| Institution: | School of Technical Physics, Xidian University, Xi'an 710071, China;School of Technical Physics, Xidian University, Xi'an 710071, China;School of Technical Physics, Xidian University, Xi'an 710071, China;School of Technical Physics, Xidian University, Xi'an 710071, China;School of Technical Physics, Xidian University, Xi'an 710071, China |
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| Abstract: | Recent experiment indicates that shot noise is the dominant excess noise in nanoscale MOSFET. However the early research reported that no shot noise was observed in MOSFET, and thermal noise was the excess noise in short channel MOSFET. Based on the device current model, we derive the conversion conditions for the dominant component of excess noise shifting from thermal noise to shot noise. According to the conversion conditions, the prediction of the noise performance of nanoscale MOSFET is given, and the results coincide with experimental phenomena, simulation data and conclusion of mesoscopic shot noise, which has been reported in the article. |
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| Keywords: | shot noise excess noise nanoscale MOSFET |
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