| LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究 |
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| 引用本文： | 朱海永,张戈,张耀举,黄呈辉,段延敏,魏勇,尉鹏飞,于永丽.LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究[J].物理学报,2011,60(9):94209-094209. |
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| 作者姓名： | 朱海永 张戈 张耀举 黄呈辉 段延敏 魏勇 尉鹏飞 于永丽 |
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| 作者单位： | (1)温州大学物理与电子信息工程学院,温州 325035; (2)温州大学物理与电子信息工程学院,温州 325035;中国科学院福建物质结构研究所光电材料化学与物理重点实验室,福州 350002; (3)中国科学院福建物质结构研究所光电材料化学与物理重点实验室,福州 350002 |
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| 基金项目： | 国家自然科学基金(批准号:10904143)和中国科学院光电材料化学与物理重点实验室开发课题(批准号: 2008DP173016)资助的课题. |
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| 摘 要： | 报道了LD端面抽运c切Nd:YVO4自拉曼倍频黄光激光器的研究. 采用10 mm长,二类临界相位匹配角 (θ=69°,ø=0°)切割的KTP晶体作为倍频晶体. 考虑到c切Nd:YVO4跃迁截面较小,所以通过对谐振腔及晶体膜系的严格设计,减少腔内插入损耗和衍射损耗. 最终在脉冲重复率为10 kHz,抽运功率为11.2 W下,获得了最高570 mW的倍频黄光激光输出,对应抽运光到倍频黄光的转化效率约为
关键词：
拉曼激光
c切Nd:YVO4')" href="#">c切Nd:YVO4
589 nm
黄光激光
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| 关 键 词： | 拉曼激光 c切Nd:YVO4 589 nm 黄光激光 |
| 收稿时间： | 2010-11-03 |
LD end-pumped c-cut Nd:YVO4 laser at 589 nm generated by sef-Raman conversion and frequency doubling |
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| Zhu Hai-Yong,Zhang Ge,Zhang Yao-Ju,Huang Cheng-Hui,Duan Yan-Min,Wei Yong,Wei Peng-Fei and Yu Yong-Li.LD end-pumped c-cut Nd:YVO4 laser at 589 nm generated by sef-Raman conversion and frequency doubling[J].Acta Physica Sinica,2011,60(9):94209-094209. |
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| Authors: | Zhu Hai-Yong Zhang Ge Zhang Yao-Ju Huang Cheng-Hui Duan Yan-Min Wei Yong Wei Peng-Fei and Yu Yong-Li |
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| Institution: | College of Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China;Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002,China;Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002,China;College of Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China;Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002,China;Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002,China;Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002,China;College of Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China;College of Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China |
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| Abstract: | In this paper we report a LD end-pumped c-cut Nd:YVO4 yellow laser generated by sef-Raman conversion and frequency doubling. A 10-mm-length KTP with critical phase matching (θ=69°, ø=0°) cut is adopted as a second-harmonic generation. For the lower stimulated-emission cross section of c-cut Nd:YVO4 crystal, the resonator cavity and the coating of crystals are carefully designed to reduce the insert loss and diffraction loss. Finally, at a repetition rate of 10 kHz and an incident pump power of 11.2 W, the average power of yellow light up to 570 mW is achieved, corresponding to an overall diode-yellow conversion efficiency of 5.1% and a slope efficiency of 6.6%. The central wavelength is at 589.17 nm with a width of 0.2 nm, which is well fitted to the sodium D2 resonance radiation. |
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| Keywords: | Raman laser c-cut Nd:YVO4 589 nm yellow laser |
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