| 用射频溅射法制备立方氮化硼薄膜 |
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| 引用本文： | 田凌,丁毅,陈浩,刘钧锴,邓金祥,贺德衍,陈光华.用射频溅射法制备立方氮化硼薄膜[J].物理学报,2006,55(10):5441-5443. |
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| 作者姓名： | 田凌 丁毅 陈浩 刘钧锴 邓金祥 贺德衍 陈光华 |
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| 作者单位： | (1)北京工业大学 教育部新型功能材料重点实验室,北京 100022; (2)兰州大学 物理科学与技术学院,兰州 730000 |
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| 摘 要： | 利用射频溅射方法在n型Si(111)衬底上制备出立方相含量接近100%且粘附性较高的立方氮化硼(c-BN)薄膜.傅里叶变换红外谱(FTIR)的结果表明，基底负偏压对薄膜立方相含量和薄膜压应力有很大影响，另外，衬底的电阻率对c-BN生长和薄膜的压应力也有一定的影响.
关键词：
立方氮化硼
射频溅射
压应力
基底负偏压
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| 关 键 词： | 立方氮化硼 射频溅射 压应力 基底负偏压 |
| 收稿时间： | 11 24 2005 12:00AM |
| 修稿时间： | 2005-11-242006-03-15 |
Preparation of cubic boron nitride films by radio frequency sputtering |
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| Tian Ling,Ding Yi,Chen Hao,Liu Jun-Kai,Deng Jin-Xiang,He De-Yan,Chen Guang-Hua.Preparation of cubic boron nitride films by radio frequency sputtering[J].Acta Physica Sinica,2006,55(10):5441-5443. |
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| Authors: | Tian Ling Ding Yi Chen Hao Liu Jun-Kai Deng Jin-Xiang He De-Yan Chen Guang-Hua |
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| Institution: | 1 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;2 Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China |
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| Abstract: | Cubic boron nitride (c-BN) thin films with approximate 100% cubic phase and lower compressive stress were prepared on n-Si(111) substrates by radio frequency sputtering. The infrared spectra showed that the negative substrate bias had important effect on the content of cubic phase and the compressive stress of films. In addition, a relatively higher substrate resistivity favored the c-BN formation and reduced the compressive stress. |
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| Keywords: | cubic boron nitride radio frequency sputtering compressive stress negative substrate bias |
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