静态随机存储器单粒子翻转效应三维数值模拟

针对特征尺寸为1.5 μm的国产静态随机存储器（SRAM），构建了三维SRAM存储单元模型，并对重离子引起的SRAM单粒子翻转效应进行了数值模拟.计算并分析了单粒子引起的单粒子翻转和电荷收集的物理图像，得到了SRAM器件的单粒子翻转截面曲线.单粒子翻转的数值模拟结果与重离子微束、重离子宽束实验结果比较一致，表明所建立的三维器件模型可以用来研究SRAM器件的单粒子翻转效应. 关键词： 三维数值模拟 单粒子翻转 微束 宽束

Three-dimensional numerial simulation of single event upset effects in static random access memory

Three-Dimensional model of static random access memory (SRAM) six-transistor cell is generated by three dimensional process simulator FLOOPS, and device simulator DESSIS is used to simulate the single-event upset effect in SRAM. Single-event upset and charge collecting maps are calculated directly from 3-D simulations. Single event upset maps and cross-section curves obtained from numerial simulation show excellent agreement with broad beam cross section curves and micro-beam upset images for 2 kbit hardened SRAM. It indicates that the three-dimensional model could be used to research the single event upsets in SRAM.