量子限制受主的光致发光研究

对一系列δ掺杂浅受主铍（Be）原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光（PL）研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品，并在每量子阱中央进行了Be原子的δ掺杂，量子阱宽度为30 到200 ?.在4.2 K温度下测量了上述系列样品的光致发光谱，清楚地观察到了束缚激子的受主从基态1s_3/2（Γ₆）到第一激发态 关键词： 量子限制受主 光致发光 多量子阱 δ掺杂

Photoluminescence study of quantum confined acceptors

Photoluminescence of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well width range from 30 to 200　? were studied. A series of Be δ-doped GaAs/AlAs multiple quantum wells with the doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4.2 K. The two-hole transition of the acceptor-bound exciton from the ground state, 1s_3/2（Γ₆）, to the first-excited state, 2s_3/2（Γ₆）, have been clearly observed. A variational principle is used to obtain the 2s-1s transition energy of quantum confined Be acceptors as a function of the well width. It is found that the acceptor transition energy increases with decreasing quantum well width, and the experimental results are in good agreement with the theoretical calculation.
Keywords： quantum confined acceptors photoluminescence multiple quantum wells delta-doped