| 高质量大面积石墨烯的化学气相沉积制备方法研究 |
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| 引用本文： | 王文荣。,周玉修,李铁,王跃林,谢晓明.高质量大面积石墨烯的化学气相沉积制备方法研究[J].物理学报,2012,61(3):38702-038702. |
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| 作者姓名： | 王文荣。 周玉修 李铁 王跃林 谢晓明 |
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| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,微系统技术重点实验室,传感技术联合国家重点实验室,上海200050
2. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 |
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| 基金项目： | 国家科技重大专项(批准号: 2011ZX02707)、中科院知识创新工程重要方向项目(批准号: KGCX2-YW-23)、国家自然科学基金创新团队(批准号: 61021064)、国家自然科学基金(批准号: 60936001, 60876037)资助的课题. |
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| 摘 要： | 石墨烯因其奇特的能带结构和优异的物理性能而成为近年来大家研究的热点, 但是目前单层石墨烯的质量与尺寸制约了其实际应用的发展. 本文采用常压化学气相沉积(CVD)方法, 基于铜箔衬底, 利用甲烷作为碳源制备了高质量大面积的单层与多层石墨烯. 研究发现: 高温度、稀薄的甲烷浓度、较短的生长时间以及合适的气体流速是制备高质量、大面积石墨烯的关键. Raman光谱, 扫描电子显微镜、透射电子显微镜等表征结果表明: 制备的石墨烯主要为单层, 仅铜箔晶界处有少量多层石墨烯. 电学测试表明CVD制备的石墨烯在低温时呈现出较明显的类半导体特性; 薄膜电阻随外界磁场的增大而减小.
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| 关 键 词： | 石墨烯 化学气相沉积 Raman光谱 电学性能 |
| 收稿时间： | 2011-03-28 |
| 修稿时间： | 6/1/2011 12:00:00 AM |
Research on synthesis of high-quality and large-scale graphene films by chemical vapor deposition |
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| Wang Wen-Rong,Zhou Yu-Xiu,Li Tie,Wang Yue-Lin and Xie Xiao-Ming.Research on synthesis of high-quality and large-scale graphene films by chemical vapor deposition[J].Acta Physica Sinica,2012,61(3):38702-038702. |
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| Authors: | Wang Wen-Rong Zhou Yu-Xiu Li Tie Wang Yue-Lin and Xie Xiao-Ming |
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| Institution: | Science and Technology on Microsystem Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China;Science and Technology on Microsystem Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China;Science and Technology on Microsystem Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China;Science and Technology on Microsystem Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China |
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| Abstract: | Graphene has received great interest because of its peculiar band structure and excellent physical properties. But today, the development of graphene is limited to its size and quality. In this paper, single- and multilayer graphene films were synthesized on copper foils by chemical vapor deposition(CVD) using methane at ambient pressure. Experiment results find the high temperature, low concentration of methane gas, shorter growth time and suitable gas flow are the key to get high-quality and large-scale graphene films. Raman spectra, scanning electron microscope(SEM) and transmission electron microscope(TEM) characterization indicate the graphene films are mostly single-layer, only with rare area having multilayer around copper boundaries. Further electrical tests show the graphene films grown by CVD method represent semiconductor behaviors under low temperature and the sheet resistance of graphene films is decreasing with the external magnetic field increasing. |
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| Keywords: | graphene CVD Raman spectra electrical behavior |
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