ZnS:Ho3+的辐射跃迁和无辐射过程

本工作研究了Ho³⁺离子在宽禁带半导体ZnS中的辐射跃迁和无辐射过程。用发射谱线的积分光强和激发态寿命获得ZnS:Ho³⁺的强度参数Ω_λ,同时计算了九个激发态的辐射跃迁几率和能级寿命。另外,通过在不同温度下测定Ho³⁺离子⁵G₆,³K₈,⁵F₂,⁵F₃和⁵S₂(⁵F₄)能级的发射光强和寿命的方法,研究了这几个激发态间的无辐射过程,其中⁵G₆,³K₈,⁵F₂和⁵F₃这四个能级是处于热平衡状态,而⁵F₃与⁵S₂(⁵F₄)能级间存在五个声子((1/n)ω_Lo=351cm^-1)参与的多声子弛豫过程。 关键词：

RADIATIVE TRANSITION AND NONRADIATIVE PROCESS IN ZnS:Ho3+

The radiative transition and nonradiative process have been studied for Ho³⁺ ions in ZnS semiconductor. From the integrated emission intensity and excited state lifetime, the intensity uarameters of ZnS:Ho³⁺ were obtained and radiation probabilities and lifetimes of Ho³⁺ ion's nine energy levels were calculated. Nonradiative process among ⁵G₆,³K₈,⁵F₂,⁵F₃ and ⁵S₂ ( ⁵F₄) was investigated by measuring the emission intensity and fluorescence lifetime at differenttemperatures. ⁵G₆, ³K₈, ⁵F₂ and ⁵F₃ are in thermal equilibrium and there are 5 phononsparticipating in the multiphonon relaxation between ⁵F₃ and ⁵S₂( ⁵F₄).