掺杂金刚石薄膜的缺陷研究

利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态.多普勒增宽谱的结果表明，不同杂质元素掺杂的金刚石薄膜，其中使正电子湮没的缺陷种类是相同的；正电子与不同杂质元素硼、硫之间的相互作用不明显；少量硼可使金刚石膜中的空位浓度减少.EPR结果表明，各掺杂样品的顺磁信号主要来自于金刚石的碳悬键. 关键词： 金刚石 掺杂 多普勒增宽谱 电子顺磁共振

Investigation of defect properties in doped diamond films

The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR). The results show that the defects annihilating the positrons is almost the same in various doped films, and the interactions between the dopants and the positrons are not distinct. In addition, a small amount of boron atoms can improve the quality of diamond films. The EPR signals of the diamond films arise from carbon dangling bonds.