| C-BN电子输运特性的Monte Carlo模拟 |
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| 引用本文： | 于丽娟,朱长纯.C-BN电子输运特性的Monte Carlo模拟[J].物理学报,2000,49(6):1148-1152. |
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| 作者姓名： | 于丽娟 朱长纯 |
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| 作者单位： | (1)西安建筑科技大学基础课部，西安 710055；西安交通大学微电子工程系，西安 710049; (2)西安交通大学微电子工程系，西安 710049 |
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| 基金项目： | 国家自然科学基金(批准号：69676004)和博士点基金(批准号：98069828)资助的课题. |
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| 摘 要： | 根据C-BN的能带结构和极性半导体的具体特征，确立了C-BN的主要散射机构，建立了适于Monte Carlo模拟的物理模型，采用单电子Monte Carlo法对C-BN体材的稳态电子输运特性进行了模拟.得出了电子的平均漂移速度、迁移率和电子能量随电场的变化规律，及电子的能量、动量弛豫时间随电场的变化规律.
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| 关 键 词： | 立方氮化硼 蒙特卡罗模拟 C－BN 电子输运特征 |
| 收稿时间： | 1999-07-15 |
MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS |
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| YU LI-JUAN and ZHU CHANG-CHUN.MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS[J].Acta Physica Sinica,2000,49(6):1148-1152. |
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| Authors: | YU LI-JUAN and ZHU CHANG-CHUN |
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| Abstract: | In the paper, according to the energy-band structure of C-BN and specific characteristics of polar semiconductor, the main scattering mechanism of C-BN is built, and the physical model applicable to Monte Carlo(MC) simulation is set up. It is the first time that the stable-state electronics transport characteristics of bulk C-BN is simulated by single electronics MC method. The variation laws of mean drift velocity, mobility as well as electronic energy with electrical field are obtained respectively. Also, the variation laws of electronic energy relaxation time and momentum relaxation time with electrical field are obtained respectively. |
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