原位氧化Zn3N2制备p型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn₃N₂薄膜，然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术，研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示，450 ℃ 下氧化2 h后的样品中除含有ZnO外，还有Zn₃N₂成分，500 ℃下氧化2 h可以制备出电阻率为0.7 Ωcm，空穴载流子浓度为10^{关键词： p型ZnO薄膜 3N₂薄膜')" href="#">Zn₃N₂薄膜 射频溅射 原位氧化}

Preparation of p-type ZnO thin films by in situ oxidation of Zn3N2

Low resistance p-type ZnO thin films were prepared by in situ oxidation of Zn₃N₂ films which were deposited by reactive radio-frequency magnetron sputtering of zinc in Ar-N₂ mixture atmosphere. The effects of oxidation temperature and time on structural, electronic and optical properties of the samples were investigated by X-ray diffraction, scanning electron microscopy, Hall-effect measurements, transmittance spectra and photoluminescence spectra. It was found that the sample oxidized at 450 ℃ contains Zn₂N₃ besides ZnO. The sample oxidized at 500 ℃ for 2 h had good properties of low resistance (0.7 Ωcm), good transmittance rate (above 85%)，predominant excitonic ultraviolet emission with narrow full width at half maximum and weak deep level visible emission. The low resistance p-type ZnO films could be used in short wavelength industrial application.