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不同氮源制备CNx纳米管薄膜及其低场致电子发射性能
引用本文:丁 佩,晁明举,梁二军,郭新勇.不同氮源制备CNx纳米管薄膜及其低场致电子发射性能[J].物理学报,2005,54(12):5926-5930.
作者姓名:丁 佩  晁明举  梁二军  郭新勇
作者单位:(1)河南大学特种功能材料实验室,开封 475001; (2)郑州大学物理工程学院,材料物理教育部重点实验室,郑州 450052; (3)郑州航空工业管理学院应用科学系,郑州 450015;郑州大学物理工程学院,材料物理教育部重点实验室,郑州 450052
基金项目:河南省高校创新人才基金(批准号:1999-125)和郑州航空工业管理学院青年科研基金(批准号:Q01G019)资助的课题.
摘    要:采用高温热解法,分别以氯化铵(NH4Cl)和乙二胺(C2H8N2)为氮源在洁净的硅片上沉积生长CNx纳米管薄膜.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行形貌观察和表征.结果显示不同氮源制备出的CNx纳米管薄膜的洁净度、有序度以及纳米管的结构明显不同.热解乙二胺(C2H8N2)/二茂铁(C10H10Fe)制备出的结晶度较低的“竹节状” 结构CNx纳米管平行基底表面有序生长,而且低场致电子发射性能优越,开启电场1.0V/μm,外加电场达到2.89V/μm时发射电流密度为860μA/cm2. 关键词: x纳米管')" href="#">CNx纳米管 高温热解 “竹节状”结构 场致发射

关 键 词:CNx纳米管  高温热解  “竹节状”结构  场致发射
文章编号:1000-3290/2005/54(12)/5926-05
收稿时间:2/4/2005 12:00:00 AM
修稿时间:2005-02-042005-07-19

Fabrication of CNx nanotubes films using different nitrogen sources and their low field emission properties
Ding Pei,Chao Ming-Ju,Liang Er-Jun and Guo Xin-Yong.Fabrication of CNx nanotubes films using different nitrogen sources and their low field emission properties[J].Acta Physica Sinica,2005,54(12):5926-5930.
Authors:Ding Pei  Chao Ming-Ju  Liang Er-Jun and Guo Xin-Yong
Institution:1. Department of Applied Science, Zhertgzhou Institute of Aeronautical Industry Management, Zhertgzhou 450015, China ; 2. Key Laboratory of Materials Physics of Ministry of Education, School of Physical Science and Engineering, Zhertgzhou University, Zhengzhou 450052, China; 3 . Laboratory of Special Functional Materials , Henan University , Kaifeng 475001,China
Abstract:The CNx nanotube films have been fabricated on Si substrates by thermal decomposition when NH4Cl and C2H8N2 were used as nitrogen sources. The scanning electron microscopy, transmission electron microscopy and Raman spectroscopy were used to characterize the CNx nanotubes. It is found that not only the degrees of purity and ordering, but also the morphology of the CNx nanotubes are quite different when different nitrogen sources are used. The CNx nanotubes fabricated by pyrolyzing C2H8N2/C10H10Fe have “bamboo-like” structure and lower crystallinity,and grow horizontally in good order on silicon substrates. Low field emission measurement gives a turn-on field of 1.0V/μm and 860μA/cm2 current density at 2.89V/μm.
Keywords:CN_x nanotubes  thermal decomposition  "bamboo-like" structure  field emission
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