静态随机存储器单粒子翻转的Monte Carlo模拟

利用蒙特卡罗(Monte Carlo)方法，对10—20MeV 中子在静态随机存储器(SRAM)中引起的单粒子翻转进行了模拟，着重对中子在SRAM 灵敏区引起的电离能量沉积进行了计算，并对中子引起单粒子翻转过程相关物理量进行了计算.这些计算模拟结果为了解10—20MeV 中子引起SRAM 单粒子翻转过程提供了详细的统计信息，为SRAM 的抗辐射加固提供相关参考信息. 关键词： SRAM单粒子翻转 Monte Carlo 模拟 能量沉积

Monte Carlo simulation of the SRAM single event upset

The process of deposited energy in sensitive volumes in a static random access memory (SRAM) chip induced by 10—20MeV neutrons is simulated using the Monte Carlo method. In the simulation, the physical parameters related to the single event upset (SEU) of the SRAM chip are calculated. The results provide detailed statistical data for the SEU process induced by 10—20MeV incident neutrons, and reference information for the deface reinforcement of the SRAM chip.