二氧化硅生长新的动力学模型

本文中提出了一个同时适用于描述极薄及厚二氧化硅层生长规律的新的氧化模型。该模型假定在氧化过程中,二氧化硅层内的总净电荷具有指数分布。本文考虑了此氧化层电荷的影响,并推得了硅热氧化的新关系式。此新关系式不论是对非常薄或厚氧化层都与实验结果符合得很好。对于厚氧化层此式则过渡到熟知的Deal-Grove关系。利用本模型还可满意地解释外加电场对氧化速率的影响。 关键词：

A NEW MODEL FOR THE GROWTH OF SILICON DIOXIDE LAYERS

A new model of oxidation is proposed to describe the growth of both thin and thick silicon dioxide layers. The assumption of the model is the presence of an exponential distribution of total net charges during oxidation. In this paper, we take into account the influence of the oxide charges and derive a new thermal-oxidation relationship of silicon, which agrees reasonably well with experimental data covering both thin and thick oxides. The relationship can be reduced to the well-known formula of Deal and Grove in the limit of thick oxide. With this model, we can also explain the effect of an external field on the oxidation rates satisfactorily.