化学气相沉积法制备定向碳纳米管阵列

以二茂铁和二甲苯分别作为催化剂和碳源，采用一种无模板的化学气相沉积法，使用单温炉设备，成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征, 并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明：在生长温度为800℃，催化剂浓度为0.02g/mL，抛光硅片上容易获得高质量的定向碳纳米管阵列，在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.

Growth of well-aligned carbon nanotubes arrays by chemical vapor deposition

A non-template CVD method was used to synthesize well-aligned carbon nanotube (ACNT) arrays. Ferrocene was used as a catalyst, xylene as the carbon source. This process carried out in a single-furnace system. The products were characterized by Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM), Energy Dispersive Spectrometry(EDS) and Raman Spectroscopy. The effects of process parameters on ACNT arrays growth were also investigated. The results show that well-aligned carbon nanotubes can be easily grown on polished silicon substrate at 800℃ with catalyst concentration of 0.02mg/L. Under the above conditions the rate of growth of ACNT arrays can reach 25μm/min.