InAs/GaAs透镜形量子点超晶格材料的纵向和横向周期对应变场分布的影响

对量子点超晶格材料中量子点纵向周期和同层量子点的横向周期间距对量子点及其周围应变场分布的影响进行了系统的研究.结果表明，横向和纵向周期通过衬底材料之间的长程相互作用对量子点沿中心轴路径应变分布的影响效果正好相反，在适当条件下，两者对量子点应变场分布的影响可以部分抵消.同时也论证了在单层量子点和超晶格量子点材料中，计算量子点的电子结构时，应综合考虑量子点空间周期分布对载流子限制势的影响，不能简单的利用孤立量子点模型来代替. 关键词： 应变 半导体量子点 自组织

Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.