| O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响 |
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| 引用本文： | 丁万昱,王华林,巨东英,柴卫平.O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响[J].物理学报,2011,60(2):28105-028105. |
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| 作者姓名： | 丁万昱 王华林 巨东英 柴卫平 |
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| 作者单位： | (1)大连交通大学材料科学与工程学院,辽宁省教育厅光电材料与器件工程研究中心,大连 116028; (2)埼玉工业大学材料科学与工程学院,日本 埼玉 369-0293 |
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| 基金项目： | 大连理工大学三束材料改性教育部重点实验室开放课题(批准号:DP1050901)资助的课题. |
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| 摘 要： | 利用直流脉冲磁控溅射方法在室温下通过改变O2流量制备具有不同晶体结构的N掺杂TiO2薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO1.68±0.06N0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO2薄膜的沉积速率、晶体结构等主要依赖于O2流量.在O2流量为2 sccm时,N掺杂TiO2薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O2流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O2流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO2薄膜,需在高O2流量(＞10 sccn)条件下制备.
关键词：
2薄膜')" href="#">N掺杂TiO2薄膜
磁控溅射
化学配比
晶体结构
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| 关 键 词： | N掺杂TiO2薄膜 磁控溅射 化学配比 晶体结构 |
| 收稿时间： | 4/1/2010 12:00:00 AM |
Composition and crystal structure of N doped TiO2 film deposited with different O2 flow rates |
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| Ding Wan-Yu,Wang Hua-Lin,Ju Dong-Ying,Chai Wei-Ping.Composition and crystal structure of N doped TiO2 film deposited with different O2 flow rates[J].Acta Physica Sinica,2011,60(2):28105-028105. |
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| Authors: | Ding Wan-Yu Wang Hua-Lin Ju Dong-Ying Chai Wei-Ping |
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| Institution: | Engineering Research Center of Optoelectronic Materials and Devices of Education Department of Liaoning Province, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;Engineering Research Center of Optoelectronic Materials and Devices of Education Department of Liaoning Province, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;Department of Material Science and Engineering, Saitama Institute of Technology, Fukay 369-0293, Japan;Engineering Research Center of Optoelectronic Materials and Devices of Education Department of Liaoning Province, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China |
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| Abstract: | N doped TiO2films were deposited in direct current pulsed magnetron sputtering system at room temperature. We have studied the influence of O2 flow rate on the crystal structure of deposited films by using stylus profilometer,X-ray photoelectron spectroscope,X-ray diffractometer,and ultraviolet-visible spectrophotometer. The results indicate that the growth behavior and crystal structure of N doped TiO2 film is dominated by the O2 flow rate. It was found that the chemical stiochiometry is close to TiO1. 68 ... |
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| Keywords: | N doped TiO2 film magnetron sputtering chemical stiochiometry crystal structure |
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