溶胶-凝胶法制备Li-N双掺p型ZnO薄膜的结构、光学和电学性能

采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜，经X射线衍射和扫描电镜图片分析，所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%，Li/N（摩尔比）为1∶1，700℃退火等优化条件下得到的最佳电学性能结果是：电阻率为0.34 Ω·cm，霍尔迁移率为16.43 cm²/V·s，载流子浓度为2.79×10¹⁹ cm^{-3关键词： Li-N双掺 p型ZnO薄膜 溶胶-凝胶 性能}

The structure, optical and electrical properties of Li-N dual-acceptor doped p-type ZnO thin films prepared by sol-gel method

Li-N dual-doped ZnO thin films were deposited on n-type Si(100) substrates with Sol-gel method. Then the deposited films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the films have polycrystalline wurtzite-structure and high c-axis preferred orientation. The analysis of the results of the deposited thin films tested in the Hall measurement at room temperature shows that these thin films have p-type electrical conductivity. The optimized results obtained at 15.0at% Li-N dual-doped concentration are 0.34 Ω·cm for the electrical resistivity，16.43 cm²/V·s for the Hall mobility and 2.79×10¹⁹ cm^-3 for the hole concentration，respectively. The photoluminescence (PL) spectra show that the thin films have strong emission of near-ultraviolet (UV) and violet light. However，the defect-related deep level emission is weak in visible regions. The effects of Li-N dual-doping concentration and annealing temperature on the structural，optical and electrical properties are also discussed in this paper.