多晶硅薄膜低温生长中的表面反应控制

报道用SiF₄和H₂的间接微波等离子体化学气相沉积方法低温生长多晶硅(poly-Si)薄膜.实验发现,等离子体中的离子、荷电集团对薄膜生长表面的轰击是影响薄膜结晶质量的重要因素之一.通过外加偏压抑制这些荷电粒子的动能是控制表面生长反应、制备高质量ploy-Si薄膜的有效方法.在合适的外加偏压下制备的poly-Si薄膜,氢含量仅约为0.9at%,中心位于520cm^-1的Raman特征峰半高宽约为4.4cm^-1. 关键词： 多晶硅薄膜 低温生长 表面生长反应 外加偏压

CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS

Polycrystalline silicon (poly-Si) thin films were prepared by a remote microwave plasma-enhanced chemical vapor deposition technique at low temperatures using SiF₄and H₂ as reactive gases.It was found that the impact of the charged particles in the plasma on the growing surface significantly affects the surface reactions and the crystallinity of the resultant films.By applying the bias on the substrates to decelerate the particles,high-quality poly-Si films, with hydrogen content less than 0.9 at% and the FWHM of 520 cm^-1 Raman peak as narrow as 4.4 cm^-1,have been obtained at a low temperature of 360℃.